SN2N7002ET7G
vs
S2N7002ET1G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ON SEMICONDUCTOR
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2019-03-14
|
2019-06-10
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
0.26 A
|
0.26 A
|
Drain-source On Resistance-Max |
2.5 Ω
|
2.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-236
|
TO-236
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
10
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Factory Lead Time |
|
17 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Reference Standard |
|
AEC-Q101
|
Terminal Finish |
|
Matte Tin (Sn) - annealed
|
|
|
|
Compare SN2N7002ET7G with alternatives
Compare S2N7002ET1G with alternatives