SMMBT5551LT3G
vs
2N5551
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
DIODES INC
|
| Part Package Code |
SOT-23 (TO-236) 3 LEAD
|
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
318
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Date Of Intro |
1999-01-01
|
|
| Samacsys Manufacturer |
onsemi
|
Diodes Incorporated
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Emitter Voltage-Max |
160 V
|
160 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
80
|
| JEDEC-95 Code |
TO-236
|
TO-92
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-W3
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.3 W
|
0.35 W
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
0.2 V
|
0.25 V
|
| Base Number Matches |
1
|
10
|
| Rohs Code |
|
No
|
| Collector-Base Capacitance-Max |
|
6 pF
|
| Qualification Status |
|
Not Qualified
|
| Transition Frequency-Nom (fT) |
|
100 MHz
|
|
|
|
Compare SMMBT5551LT3G with alternatives
Compare 2N5551 with alternatives