SMLJ8.5E3 vs MASMLJ8.5A/TR feature comparison

SMLJ8.5E3 Microsemi Corporation

Buy Now Datasheet

MASMLJ8.5A/TR Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-214AB
Package Description R-PDSO-C2 PLASTIC PACKAGE-2
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 11.5 V 10.4 V
Breakdown Voltage-Min 9.44 V 9.44 V
Breakdown Voltage-Nom 10.47 V 9.92 V
Clamping Voltage-Max 21.5 V 14.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W 1.61 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8.5 V 8.5 V
Reverse Current-Max 25 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 24 1
Additional Feature TR, 7 INCH: 750

Compare SMLJ8.5E3 with alternatives

Compare MASMLJ8.5A/TR with alternatives