SMLJ58C
vs
SMDJ58CA-HRA
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
LITTELFUSE INC
Package Description
R-PDSO-C2
R-PDSO-J2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max
78.7 V
71.2 V
Breakdown Voltage-Min
64.4 V
64.4 V
Breakdown Voltage-Nom
71.6 V
67.8 V
Clamping Voltage-Max
103 V
93.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
58 V
58 V
Reverse Current-Max
5 µA
2 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
1
Rohs Code
JEDEC-95 Code
DO-214AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
6.5 W
Reference Standard
UL RECOGNIZED
Reverse Test Voltage
58 V
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
40
Compare SMLJ58C with alternatives
Compare SMDJ58CA-HRA with alternatives