SMLJ58C
vs
3.0SMCJ58CATR-A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MDE SEMICONDUCTOR INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code
DO-214AB
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
71.2 V
71.2 V
Breakdown Voltage-Min
64.4 V
64.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
AEC-Q101
Rep Pk Reverse Voltage-Max
58 V
58 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN (SN)
PURE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
1
Package Description
R-PDSO-C2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Compare SMLJ58C with alternatives
Compare 3.0SMCJ58CATR-A with alternatives