SMLJ51A vs 3.0SMCJ51A-T3 feature comparison

SMLJ51A Microsemi Corporation

Buy Now Datasheet

3.0SMCJ51A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 62.7 V 62.67 V
Breakdown Voltage-Min 56.7 V 56.7 V
Breakdown Voltage-Nom 59.7 V
Clamping Voltage-Max 82.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 45 1
Reference Standard UL RECOGNIZED

Compare SMLJ51A with alternatives

Compare 3.0SMCJ51A-T3 with alternatives