SMLJ40AE3 vs SMDJ40AF1 feature comparison

SMLJ40AE3 Microsemi Corporation

Buy Now Datasheet

SMDJ40AF1 Yangzhou Yangjie Electronics Co Ltd

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP YANGZHOU YANGJIE ELECTRONICS CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 49.1 V 49.1 V
Breakdown Voltage-Min 44.4 V 44.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W 6.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 46.75 V
Clamping Voltage-Max 64.5 V
Forward Voltage-Max (VF) 3.5 V
Reverse Current-Max 5 µA
Reverse Test Voltage 40 V

Compare SMLJ40AE3 with alternatives

Compare SMDJ40AF1 with alternatives