SMLJ36AE3/TR vs 3.0SMCJ36 feature comparison

SMLJ36AE3/TR Microsemi Corporation

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3.0SMCJ36 Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 44.2 V 48.9 V
Breakdown Voltage-Min 40 V 40 V
Breakdown Voltage-Nom 42.1 V 44.45 V
Clamping Voltage-Max 11.2 V 64.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 36 V 36 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 19
Reference Standard MIL-STD-202
Reverse Current-Max 5 µA
Reverse Test Voltage 36 V

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