SMLJ26A
vs
3.0SMCJ26A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-C2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
31.9 V
31.9 V
Breakdown Voltage-Min
28.9 V
28.9 V
Breakdown Voltage-Nom
30.4 V
30.4 V
Clamping Voltage-Max
42.1 V
42.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
26 V
26 V
Reverse Current-Max
5 µA
2 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
5
22
Rohs Code
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
JESD-609 Code
e3
Power Dissipation-Max
5 W
Reverse Test Voltage
26 V
Terminal Finish
TIN
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