SMLJ18A-H vs 3.0SMCJ18A-GT3 feature comparison

SMLJ18A-H Bourns Inc

Buy Now Datasheet

3.0SMCJ18A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer BOURNS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature PRSM-MIN
Breakdown Voltage-Max 22.1 V 23.3 V
Breakdown Voltage-Min 20 V 20 V
Breakdown Voltage-Nom 21.05 V
Clamping Voltage-Max 29.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard IEC-61000-4-2, 4-4, 4-5 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 18 V 18 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 2
Qualification Status Not Qualified

Compare SMLJ18A-H with alternatives

Compare 3.0SMCJ18A-GT3 with alternatives