SMLJ18A-H
vs
3.0SMCJ18A-GT3
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
BOURNS INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
PRSM-MIN
Breakdown Voltage-Max
22.1 V
23.3 V
Breakdown Voltage-Min
20 V
20 V
Breakdown Voltage-Nom
21.05 V
Clamping Voltage-Max
29.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Reference Standard
IEC-61000-4-2, 4-4, 4-5
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
18 V
18 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
2
Qualification Status
Not Qualified
Compare SMLJ18A-H with alternatives
Compare 3.0SMCJ18A-GT3 with alternatives