SMLJ160A
vs
3.0SMCJ160A-GT3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
SENSITRON SEMICONDUCTOR
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
197 V
197 V
Breakdown Voltage-Min
178 V
178 V
Breakdown Voltage-Nom
188 V
187.5 V
Clamping Voltage-Max
259 V
259 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
160 V
160 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
5
2
Pbfree Code
Rohs Code
Part Package Code
DO-214AB
Pin Count
2
JEDEC-95 Code
DO-214AB
Moisture Sensitivity Level
1
Reference Standard
UL RECOGNIZED
Reverse Test Voltage
160 V
Compare SMLJ160A with alternatives
Compare 3.0SMCJ160A-GT3 with alternatives