SMLJ12A-Q vs 3.0SMCJ12 feature comparison

SMLJ12A-Q Bourns Inc

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3.0SMCJ12 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer BOURNS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Breakdown Voltage-Max 14.7 V 16.26 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14 V
Clamping Voltage-Max 25.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 2 µA
Reverse Test Voltage 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 42
Package Description R-PDSO-C2
Qualification Status Not Qualified

Compare SMLJ12A-Q with alternatives

Compare 3.0SMCJ12 with alternatives