SMLJ10CA vs SMDJ10CAV6G feature comparison

SMLJ10CA MDE Semiconductor Inc

Buy Now Datasheet

SMDJ10CAV6G Taiwan Semiconductor

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AB
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 1
Date Of Intro 2020-04-27
Breakdown Voltage-Nom 11.7 V
Clamping Voltage-Max 17 V
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 6.5 W
Reverse Current-Max 5 µA
Reverse Test Voltage 10 V

Compare SMLJ10CA with alternatives

Compare SMDJ10CAV6G with alternatives