SMLJ10AE3/TR
vs
SMLJ10A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
INTERNATIONAL SEMICONDUCTOR INC
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
LOW INDUCTANCE
Breakdown Voltage-Max
12.3 V
12.3 V
Breakdown Voltage-Min
11.1 V
11.1 V
Breakdown Voltage-Nom
11.7 V
11.7 V
Clamping Voltage-Max
259 V
17 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.61 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
10 V
10 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
5
Reverse Current-Max
5 µA
Compare SMLJ10AE3/TR with alternatives
Compare SMLJ10A with alternatives