SMLJ10A vs MASMLJ10TR feature comparison

SMLJ10A International Semiconductor Inc

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MASMLJ10TR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE TR, 7 INCH: 750
Breakdown Voltage-Max 12.3 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 11.7 V 12.35 V
Clamping Voltage-Max 17 V 287 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 5 1
Rohs Code No
Part Package Code DO-214AB
Pin Count 2
JEDEC-95 Code DO-214AB
JESD-609 Code e0
Moisture Sensitivity Level 1
Power Dissipation-Max 1.61 W
Terminal Finish TIN LEAD

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