SMLJ10 vs MASMLJ10E3TR feature comparison

SMLJ10 MDE Semiconductor Inc

Buy Now Datasheet

MASMLJ10E3TR Microsemi Corporation

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code DO-214AB DO-214AB
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH: 750
Breakdown Voltage-Max 12.3 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 17 1
Package Description R-PDSO-C2
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.61 W

Compare SMLJ10 with alternatives

Compare MASMLJ10E3TR with alternatives