SMLG64C vs MXSMLG64CE3 feature comparison

SMLG64C International Semiconductor Inc

Buy Now Datasheet

MXSMLG64CE3 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROSEMI CORP
Package Description R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE
Breakdown Voltage-Max 86.9 V 86.9 V
Breakdown Voltage-Min 71.1 V 71.1 V
Breakdown Voltage-Nom 79 V
Clamping Voltage-Max 114 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 64 V 64 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Rohs Code Yes
Part Package Code DO-215AB
Pin Count 2
JEDEC-95 Code DO-215AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.61 W
Reference Standard MIL-19500
Terminal Finish MATTE TIN

Compare SMLG64C with alternatives

Compare MXSMLG64CE3 with alternatives