SML10S75XX
vs
IXFT75N10Q
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TT ELECTRONICS PLC
LITTELFUSE INC
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
1500 mJ
1500 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
75 A
75 A
Drain-source On Resistance-Max
0.019 Ω
0.02 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
300 A
300 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Additional Feature
AVALANCHE RATED
JEDEC-95 Code
TO-268AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
300 W
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Compare SML10S75XX with alternatives
Compare IXFT75N10Q with alternatives