SMF70A-R1-10001
vs
SMF70ARQG
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
86 V
86 V
Breakdown Voltage-Min
77.8 V
77.8 V
Breakdown Voltage-Nom
81.9 V
81.9 V
Clamping Voltage-Max
113 V
113 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
200 W
200 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61249; MIL-STD-750
IEC-61249-2-21
Rep Pk Reverse Voltage-Max
70 V
70 V
Reverse Current-Max
1 µA
1 µA
Reverse Test Voltage
70 V
70 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Date Of Intro
2018-11-21
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW POWER LOSS
Forward Voltage-Max (VF)
3.5 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare SMF70A-R1-10001 with alternatives
Compare SMF70ARQG with alternatives