SMF60ATR vs SMF60A-AU_R1_000A1 feature comparison

SMF60ATR Sangdest Microelectronics (Nanjing) Co Ltd

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SMF60A-AU_R1_000A1 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description R-PDSO-F2 R-PDSO-F2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-08-31 2016-09-05
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 73.7 V 73.7 V
Breakdown Voltage-Min 66.7 V 66.7 V
Breakdown Voltage-Nom 70.2 V
Clamping Voltage-Max 96.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 200 W 200 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 60 V 60 V
Reverse Current-Max 1 µA
Reverse Test Voltage 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Power Dissipation-Max 1 W
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949

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Compare SMF60A-AU_R1_000A1 with alternatives