SMF60ATR
vs
SMF60A-AU_R1_000A1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
PAN JIT INTERNATIONAL INC
Package Description
R-PDSO-F2
R-PDSO-F2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2018-08-31
2016-09-05
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
73.7 V
73.7 V
Breakdown Voltage-Min
66.7 V
66.7 V
Breakdown Voltage-Nom
70.2 V
Clamping Voltage-Max
96.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
1.25 V
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
200 W
200 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
60 V
60 V
Reverse Current-Max
1 µA
Reverse Test Voltage
60 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
1
1
Power Dissipation-Max
1 W
Reference Standard
AEC-Q101; IEC-61000-4-2; TS 16949
Compare SMF60ATR with alternatives
Compare SMF60A-AU_R1_000A1 with alternatives