SMF100ARVG
vs
SMF100A-R2-10001
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
PAN JIT INTERNATIONAL INC
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2018-11-21
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW POWER LOSS
Breakdown Voltage-Max
123 V
123 V
Breakdown Voltage-Min
111 V
111 V
Breakdown Voltage-Nom
117 V
117 V
Clamping Voltage-Max
162 V
162 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
200 W
200 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61249-2-21
IEC-61249; MIL-STD-750
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
1 µA
1 µA
Reverse Test Voltage
100 V
100 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Compare SMF100ARVG with alternatives
Compare SMF100A-R2-10001 with alternatives