SMDJ45ATR
vs
SMDJ43A-T7
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
LITTELFUSE INC
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2018-09-26
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
55.3 V
52.8 V
Breakdown Voltage-Min
50 V
47.8 V
Breakdown Voltage-Nom
52.65 V
50.3 V
Clamping Voltage-Max
72.7 V
69.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
45 V
43 V
Reverse Current-Max
2 µA
Reverse Test Voltage
45 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
40
Base Number Matches
1
1
Part Package Code
DO-214AB
Package Description
R-PDSO-J2
Pin Count
2
Samacsys Manufacturer
LITTELFUSE
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
6.5 W
Reference Standard
IEC-61000-4-2, 4-4; UL RECOGNIZED
Terminal Finish
MATTE TIN
Compare SMDJ45ATR with alternatives
Compare SMDJ43A-T7 with alternatives