SMDJ36CAHV6G
vs
SMDJ36C-C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SECOS CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
44.2 V
46.31 V
Breakdown Voltage-Min
40 V
37.89 V
Breakdown Voltage-Nom
42.1 V
Clamping Voltage-Max
58.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
6.5 W
6 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
36 V
36 V
Reverse Current-Max
1 µA
Reverse Test Voltage
36 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
1
Package Description
SMC, 2 PIN
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