SMDJ33CAF1 vs SMDJ33CAHV7G feature comparison

SMDJ33CAF1 Yangzhou Yangjie Electronics Co Ltd

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SMDJ33CAHV7G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 40.6 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 38.65 V 38.65 V
Clamping Voltage-Max 53.3 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Rep Pk Reverse Voltage-Max 33 V 33 V
Reverse Current-Max 5 µA 1 µA
Reverse Test Voltage 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMDJ33CAHV7G with alternatives