SMDJ26CATR vs SMDJ26C-C feature comparison

SMDJ26CATR Sangdest Microelectronics (Nanjing) Co Ltd

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SMDJ26C-C Secos Corporation

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Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SECOS CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-09-26
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 31.9 V 33.44 V
Breakdown Voltage-Min 28.9 V 27.36 V
Breakdown Voltage-Nom 30.4 V
Clamping Voltage-Max 42.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 26 V 26 V
Reverse Current-Max 2 µA
Reverse Test Voltage 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Package Description SMC, 2 PIN
JESD-609 Code e3
Power Dissipation-Max 6 W
Terminal Finish Tin (Sn)

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