SMDJ26CA-AT/TR7
vs
SMDJ26CAHR7G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PULSE ELECTRONICS CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
31.9 V
31.9 V
Breakdown Voltage-Min
28.9 V
28.9 V
Breakdown Voltage-Nom
30.4 V
30.4 V
Clamping Voltage-Max
42.1 V
42.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.5 W
Reference Standard
AEC-Q101; MIL-STD-750; UL CERTIFIED
AEC-Q101
Rep Pk Reverse Voltage-Max
26 V
26 V
Reverse Current-Max
2 µA
Reverse Test Voltage
26 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
3
1
Rohs Code
Package Description
SMC, 2 PIN
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare SMDJ26CA-AT/TR7 with alternatives
Compare SMDJ26CAHR7G with alternatives