SMDJ22CAV7G vs SMDJ22CAHM6G feature comparison

SMDJ22CAV7G Taiwan Semiconductor

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SMDJ22CAHM6G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2020-04-27
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 26.9 V 26.9 V
Breakdown Voltage-Min 24.4 V 24.4 V
Breakdown Voltage-Nom 25.65 V 25.65 V
Clamping Voltage-Max 35.5 V 35.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Rep Pk Reverse Voltage-Max 22 V 22 V
Reverse Current-Max 1 µA
Reverse Test Voltage 22 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-C2
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMDJ22CAHM6G with alternatives