SMDJ12C vs SMDJ12CAV7G feature comparison

SMDJ12C Sangdest Microelectronics (Nanjing) Co Ltd

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SMDJ12CAV7G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 10 1
Date Of Intro 2020-04-27
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 14.7 V
Breakdown Voltage-Min 13.3 V
Breakdown Voltage-Nom 14 V
Clamping Voltage-Max 19.9 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 3000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL
Power Dissipation-Max 6.5 W
Rep Pk Reverse Voltage-Max 12 V
Reverse Current-Max 1 µA
Reverse Test Voltage 12 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL

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