SMDJ11
vs
3.0SMCJ11
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
CONCORD SEMICONDUCTOR CORP
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
12.85 V
13.55 V
Clamping Voltage-Max
18.2 V
20.1 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
11 V
11 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
10
19
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
14.9 V
Breakdown Voltage-Min
12.2 V
Configuration
SINGLE
Diode Element Material
SILICON
Non-rep Peak Rev Power Dis-Max
3000 W
Number of Elements
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Reference Standard
MIL-STD-202
Reverse Current-Max
5 µA
Reverse Test Voltage
11 V
Technology
AVALANCHE