SMDJ100ATR vs 3.0SMCJ100A feature comparison

SMDJ100ATR Sangdest Microelectronics (Nanjing) Co Ltd

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3.0SMCJ100A Lite-On Semiconductor Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD LITE-ON SEMICONDUCTOR CORP
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-09-26
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 123 V 122.7 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 117 V 116.85 V
Clamping Voltage-Max 162 V 162 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 2 µA
Reverse Test Voltage 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Base Number Matches 1 21
Pbfree Code Yes
Package Description SMC, 2 PIN
Pin Count 2
JESD-609 Code e3
Power Dissipation-Max 2 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

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