SMDJ100A-AT/TR13 vs 3.0SMCJ100 feature comparison

SMDJ100A-AT/TR13 Pulse Electronics Corporation

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3.0SMCJ100 Formosa Microsemi Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer PULSE ELECTRONICS CORP FORMOSA MICROSEMI CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 123 V 123 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 117 V
Clamping Voltage-Max 162 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Reference Standard AEC-Q101; MIL-STD-750; UL CERTIFIED
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 2 µA
Reverse Test Voltage 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 8
Package Description SMC-F, 2 PIN

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