SMCJLCE80ATRE3 vs MVSMCJLCE80AE3 feature comparison

SMCJLCE80ATRE3 Microsemi Corporation

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MVSMCJLCE80AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 93.35 V 93.35 V
Clamping Voltage-Max 129 V 129 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 80 V 80 V
Surface Mount YES YES
Base Number Matches 1 1
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
Breakdown Voltage-Max 98 V
Breakdown Voltage-Min 88.7 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL

Compare SMCJLCE80ATRE3 with alternatives

Compare MVSMCJLCE80AE3 with alternatives