SMCJ90A-Q vs SMCJ90AG feature comparison

SMCJ90A-Q Bourns Inc

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SMCJ90AG Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer BOURNS INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant not_compliant
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Additional Feature PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 111 V 111 V
Breakdown Voltage-Min 100 V 100 V
Breakdown Voltage-Nom 105.5 V 105.5 V
Clamping Voltage-Max 189.8 V 146 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 90 V 90 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 90 V 90 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Forward Voltage-Max (VF) 3.5 V
Power Dissipation-Max 5 W

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