SMCJ9.0A vs SMCJ9.0A feature comparison

SMCJ9.0A Bourns Inc

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SMCJ9.0A International Semiconductor Inc

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer BOURNS INC INTERNATIONAL SEMICONDUCTOR INC
Part Package Code DO-214AB
Pin Count 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Bourns
Breakdown Voltage-Max 11.5 V 11.1 V
Breakdown Voltage-Min 10 V 10 V
Breakdown Voltage-Nom 10.75 V 10.6 V
Clamping Voltage-Max 15.4 V 15.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9 V 9 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 8 2
Reverse Current-Max 5 µA

Compare SMCJ9.0A with alternatives

Compare SMCJ9.0A with alternatives