SMCJ8.0A-HRAT7
vs
SMCJ8.0
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
LITTELFUSE INC
INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY; HIGH RELIABILITY
Breakdown Voltage-Max
9.83 V
10.9 V
Breakdown Voltage-Min
8.89 V
8.89 V
Breakdown Voltage-Nom
9.36 V
9.9 V
Clamping Voltage-Max
13.6 V
15 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
3 W
Reference Standard
MIL-PRF-19500; MIL-STD-750; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
8 V
8 V
Reverse Current-Max
50 µA
50 µA
Reverse Test Voltage
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
4
Package Description
R-PDSO-C2
Qualification Status
Not Qualified
Compare SMCJ8.0A-HRAT7 with alternatives
Compare SMCJ8.0 with alternatives