SMCJ6053AE3 vs 1N6283A feature comparison

SMCJ6053AE3 Microsemi Corporation

Buy Now Datasheet

1N6283A Comchip Technology Corporation Ltd

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP COMCHIP TECHNOLOGY CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE
Breakdown Voltage-Max 41 V
Breakdown Voltage-Min 37.1 V
Breakdown Voltage-Nom 39.05 V 33 V
Clamping Voltage-Max 53.9 V 45.7 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 33 V 28.2 V
Surface Mount YES NO
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 1 41

Compare SMCJ6053AE3 with alternatives