SMCJ6.5C vs SMCG6041AE3 feature comparison

SMCJ6.5C Sangdest Microelectronics (Nanjing) Co Ltd

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SMCG6041AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-G2
Reach Compliance Code compliant compliant
Breakdown Voltage-Max 8.82 V 12.6 V
Breakdown Voltage-Min 7.22 V 11.4 V
Breakdown Voltage-Nom 8.02 V 12 V
Clamping Voltage-Max 12.3 V 16.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-215AB
JESD-30 Code R-PDSO-C2 R-PDSO-G2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 6.5 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 24 6
Part Package Code DO-215AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW INDUCTANCE
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 5 W
Terminal Finish MATTE TIN

Compare SMCJ6.5C with alternatives

Compare SMCG6041AE3 with alternatives