SMCJ58CA-HRAT7
vs
SMCJ60CAM6
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
LITTELFUSE INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY; HIGH RELIABILITY
Breakdown Voltage-Max
71.2 V
73.7 V
Breakdown Voltage-Min
64.4 V
66.7 V
Breakdown Voltage-Nom
67.8 V
70.2 V
Clamping Voltage-Max
93.6 V
96.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
6.5 W
5 W
Reference Standard
MIL-PRF-19500; MIL-STD-750; UL RECOGNIZED
AEC-Q101
Rep Pk Reverse Voltage-Max
58 V
60 V
Reverse Current-Max
1 µA
Reverse Test Voltage
58 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
1
1
Rohs Code
Package Description
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
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