SMCJ54A-ATR
vs
SMCJ54
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
INTERNATIONAL SEMICONDUCTOR INC
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2018-08-30
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
66.3 V
73.3 V
Breakdown Voltage-Min
60 V
60 V
Breakdown Voltage-Nom
63.15 V
66.7 V
Clamping Voltage-Max
87.1 V
96.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
54 V
54 V
Reverse Current-Max
5 µA
5 µA
Reverse Test Voltage
54 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
44
Power Dissipation-Max
3 W
Qualification Status
Not Qualified
Compare SMCJ54A-ATR with alternatives
Compare SMCJ54 with alternatives