SMCJ45A vs SMCJ43AM6G feature comparison

SMCJ45A Microchip Technology Inc

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SMCJ43AM6G Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 55.3 V 52.8 V
Breakdown Voltage-Min 50 V 47.8 V
Breakdown Voltage-Nom 52.65 V 50.3 V
Clamping Voltage-Max 72.7 V 69.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6 W 5 W
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-STD-750 AEC-Q101
Rep Pk Reverse Voltage-Max 45 V 43 V
Reverse Current-Max 1 µA
Reverse Test Voltage 45 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 58 1
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-214AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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