SMCJ40R7G vs MVSMCJ5650E3 feature comparison

SMCJ40R7G Taiwan Semiconductor

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MVSMCJ5650E3 Microsemi Corporation

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Yes Yes
Obsolete Obsolete
TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
R-PDSO-C2 PLASTIC PACKAGE-2
not_compliant unknown
EAR99 EAR99
8541.10.00.50 8541.10.00.50
EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
54.3 V 56.1 V
44.4 V 45.9 V
49.35 V 51 V
71.4 V 73.5 V
SINGLE SINGLE
SILICON SILICON
TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
DO-214AB DO-214AB
R-PDSO-C2 R-PDSO-C2
e3 e3
1
1500 W 1500 W
1 1
2 2
150 °C 150 °C
-55 °C -55 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
SMALL OUTLINE SMALL OUTLINE
260
UNIDIRECTIONAL UNIDIRECTIONAL
5 W 5 W
AEC-Q101
40 V 41.3 V
YES YES
AVALANCHE AVALANCHE
MATTE TIN MATTE TIN
C BEND C BEND
DUAL DUAL
30
1 1
DO-214AB
2
Not Qualified

Compare SMCJ40R7G with alternatives

Compare MVSMCJ5650E3 with alternatives