SMCJ40HR6G
vs
CD214C-T40A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
BOURNS INC
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
54.3 V
51.1 V
Breakdown Voltage-Min
44.4 V
44.4 V
Breakdown Voltage-Nom
49.35 V
47.75 V
Clamping Voltage-Max
71.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
40 V
40 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
1
Part Package Code
DO-214AB
Pin Count
2
Qualification Status
Not Qualified
Compare SMCJ40HR6G with alternatives
Compare CD214C-T40A with alternatives