SMCJ33C-GT3
vs
1.5KE33CARL4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MOTOROLA INC
Package Description
R-PDSO-C2
O-PALF-W2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
46.5 V
34.7 V
Breakdown Voltage-Min
36.7 V
31.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
O-PALF-W2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
33 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
WIRE
Terminal Position
DUAL
AXIAL
Base Number Matches
2
3
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
HIGH RELIABILITY, LOW IMPEDANCE
Breakdown Voltage-Nom
33 V
Case Connection
ISOLATED
Clamping Voltage-Max
45.7 V
Power Dissipation-Max
5 W
Reverse Current-Max
5 µA
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