SMCJ30-GT3 vs MXSMCG5646A feature comparison

SMCJ30-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

MXSMCG5646A Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-G2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 42.2 V 37.8 V
Breakdown Voltage-Min 33.3 V 34.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-215AB
JESD-30 Code R-PDSO-C2 R-PDSO-G2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 30 V 30.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 2
Part Package Code DO-215AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 36 V
Clamping Voltage-Max 49.9 V
JESD-609 Code e0
Power Dissipation-Max 5 W
Terminal Finish TIN LEAD

Compare SMCJ30-GT3 with alternatives

Compare MXSMCG5646A with alternatives