SMCJ28 vs SMCJ28HM6 feature comparison

SMCJ28 Galaxy Microelectronics

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SMCJ28HM6 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SMC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 38 V 38 V
Breakdown Voltage-Min 31.1 V 31.1 V
Breakdown Voltage-Nom 34.5 V 34.55 V
Clamping Voltage-Max 50 V 50 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 28 V 28 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 44 1
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-214AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMCJ28 with alternatives

Compare SMCJ28HM6 with alternatives