SMCJ170CA
vs
SMCJ170CA-M3/57T
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
209 V
209 V
Breakdown Voltage-Min
189 V
189 V
Breakdown Voltage-Nom
199 V
199 V
Clamping Voltage-Max
275 V
275 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
170 V
170 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Pbfree Code
Part Package Code
DO-214AB
Pin Count
2
JEDEC-95 Code
DO-214AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
6.5 W
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Compare SMCJ170CA with alternatives
Compare SMCJ170CA-M3/57T with alternatives