SMCJ170C vs SMCJ170C-G feature comparison

SMCJ170C Semtech Corporation

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SMCJ170C-G Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMTECH CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 189 V 189 V
Breakdown Voltage-Nom 210 V
Clamping Voltage-Max 304 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 170 V 170 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 43 2
Package Description R-PDSO-C2
Breakdown Voltage-Max 239.5 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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