SMCJ170A-GT3 vs MVSMCJLCE170ATR feature comparison

SMCJ170A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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MVSMCJLCE170ATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 217.5 V 209 V
Breakdown Voltage-Min 189 V 189 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED MIL-19500
Rep Pk Reverse Voltage-Max 170 V 170 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DO-214AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750
JESD-609 Code e0
Power Dissipation-Max 5 W
Terminal Finish TIN LEAD

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