SMCJ170A-G vs MVSMCJLCE160E3TR feature comparison

SMCJ170A-G Sangdest Microelectronics (Nanjing) Co Ltd

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MVSMCJLCE160E3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 217.5 V 218 V
Breakdown Voltage-Min 189 V 178 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED MIL-19500
Rep Pk Reverse Voltage-Max 170 V 160 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
Part Package Code DO-214AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Terminal Finish MATTE TIN

Compare SMCJ170A-G with alternatives

Compare MVSMCJLCE160E3TR with alternatives