SMCJ17
vs
MSMCGLCE17AE3TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
MICROSEMI CORP
Package Description
R-PDSO-C2
R-PDSO-G2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
23.1 V
20.9 V
Breakdown Voltage-Min
18.9 V
18.9 V
Breakdown Voltage-Nom
21 V
19.9 V
Clamping Voltage-Max
30.5 V
27.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-G2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-40 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
17 V
17 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
8
1
Rohs Code
Part Package Code
DO-215AB
Pin Count
2
Additional Feature
HIGH RELIABILITY
Diode Capacitance-Min
100 pF
JEDEC-95 Code
DO-215AB
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reference Standard
IEC-61000-4-2, 4-4, 4-5
Reverse Test Voltage
17 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SMCJ17 with alternatives
Compare MSMCGLCE17AE3TR with alternatives